FBAR 2D

Follow

FBAR Displacement at Fs

 

Model Description

Film bulk acoustic resonators (FBARs) are a widely known technology used for RF filter applications. They are typically operated at 1.5 GHz and over due to their excellent performance in terms of high quality factor and low insertion loss.

The 2D FBAR model provides a simple starting structure consisting of a piezoelectric active layer (Aluminum Nitride), Molybdenum electrodes and silicon substrate material at the sides of the air cavity.

FBAR-2D-Geom-1024x106.png

Model Schematic

 

Parametric Variables

The base model allows the following design variables to be adjusted. By default electrode thickness and electrode aspect ratio are set as design variables to be swept (indicated by *).

 

Parametric Variable

Description

Default Value

fwid*

Width of Frame Recess

2 µm

fthk*

Thickness of Frame Recess

200 nm

aln_thk*

Thickness of AlN piezoelectric layer

800 nm

width

Width of cavity

100 µm

depth

Depth of device

200 µm

si_thk

Thickness of Silicon substrate

2 µm

si_wid

Width of Silicon substrate

10 µm

elec_bot

Bottom electrode thickness

400 nm

elec_tot

Top electrode thickness

400 nm

 

Outputs

A wide range of outputs can be generated, including:

  • Electrical Impedance
  • Quality Factor
  • Mode Shapes (Harmonic Analysis)

 

Post-process-output-1024x589.png

Example Post Processor Outputs

 

Runtime Statistics

 

Model size

 30712 elements

Solve Time

 225 secs (2 CPUS)

Core Hours

 0.12

Memory Usage

 30 MB

Recommended CPU Configuration

 2 CPU

 

Files

The following input files are required to run this model:

1 out of 1 found this helpful

Comments

0 comments

Please sign in to leave a comment.